RF2045 |
RFQ for RF2045 Required Field |
 |
| Technical/Catalog Information | RF2045TR7 |
| Vendor | RFMD |
| Category | RF and RFID |
| Package / Case | 4-Micro-X |
| Voltage - Supply | 4.6V ~ 5.6V |
| Current - Supply | 65mA |
| Gain | 14.1dB |
| Frequency | 0Hz ~ 6GHz |
| RF Type | General Purpose |
| Packaging | Tape & Reel (TR) |
| Noise Figure | 4.7dB |
| P1db | 17.9dBm |
| Test Frequency | 1GHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RF2045TR7 RF2045TR7 |
| Product | Manufacturers | Pack | D/C |
| RF2045 | - | - | 06+ |
The RF2045 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplificatio n in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.
Typical Application |
Features |
| • Broadband, Low Noise Gain Blocks• IF or RF Buffer Amplifiers• Driver Stage for Power Amplifiers• Final PA for Low Power Applications• High Reliability Applications• Broadband Test Equipment | • DC to 6000MHz Operation• Internally matched Input and Output• 13dB Small Signal Gain• +32dBm Output IP3• +18dBm Output Power• Excellent Gain Flatness |
|
Parameter |
Rating |
Unit |
| Supply Current |
120 |
mA |
| Input RF Power |
+20 |
dBm |
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
